W29GL256SH9T-TR Datasheet, PDF (72/88 Pages) Winbond – 256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE

W29GL256S
10.3 AC Characteristics
10.3.1 Internal Algorithm Performance Table
Table 10-3 Internal Algorithm Characteristics
Parameter
Sector Erase Time 128 kbyte⁵
Single Word Programming Time¹
2-byte¹
32-byte¹
Buffer Programming Time
64-byte¹
128byte¹
256byte¹
512-byte
Effective Write Buffer Program Operation per Word
512-byte
Sector Programming Time 128 kB (full Buffer Programming)⁶
Erase Suspend/Erase Resume (tESL)
Program Suspend/Program Resume (tPSL)
Erase Resume to next Erase Suspend (tERS)⁷
Program Resume to next Program Suspend (tPRS)⁷
Blank Check
Type²
300
10
50
80
110
170
280
500
1
108
100
100
6.2
Max³
2000
200
200
350
450
850
1400
3000
192
40
40
8.5
Unit
ms
μs
μs
μs
ms
μs
μs
μs
μs
ms
Notes:
1. Not 100% tested.
2. Program and erase typical times presume the following conditions: 25°C, 3.0V VCC, a random data pattern and
10,000 cycles.
3. 90°C, VCC = 2.70V, 100,000 cycles, and a random data pattern are considered under worst case conditions.
4. Specifications are based upon a 512-byte write buffer for Effective write buffer operations.
5. All words are programmed to 0000h before Sector and Chip erasure as part of the pre-programming step of the
Internal Erase algorithm.
6. System-level overhead is the time required to execute the bus-cycle sequence for the program command.
7. In order for Program or Erase operations to progress to completion requires the time period to be ≥ typical periods.
However, a minimum of 60 ns is required between Resume and Suspend.
Publication Release Date: Jul 02, 2014
Revision C
72