W29GL256SH9T-TR Datasheet, PDF (28/88 Pages) Winbond – 256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE

W29GL256S
Figure 8-2 Write Buffer Programming Operation with Data Polling Status
Write to Buffer CMD (SA)
Word Count
minus-1, (SA)
Write beginning Add/Data
YES
WC=0?
NO
Write to a different (SA)
Write to Buffer Aborted.
Must “Write to Buffer
Abort Reset” to return to
Read mode
YES
Abort Write to Buffer
NO
Write next Add/Data⁴
WC=WC - 1
Write Program to Flash
Confirm (SA)
Read DQ[7:0] /w
Add=Last Loaded Add
NO
DQ1=1?
YES
DQ7=Data?
YES
NO
DQ5=1?
NO
YES
Read DQ[7:0] /w
Add=Last Loaded Add
DQ7=Data?
NO
Fail / Abort²
YES
Pass
Notes:
1.
2.
3.
4.
DQ7 should be rechecked even if DQ5 = 1 because DQ7 may change simultaneously with DQ5.
If this flowchart location was reached because DQ5 = 1, then the device FAILED. If this flowchart location was
reached because DQ1 = 1, then the Write Buffer operation was ABORTED. In either case the proper RESET
command must be written to the device to return the device to READ mode. Write-Buffer-Programming-Abort-Rest
if DQ1 = 1, either Software RESET or Write-Buffer-Programming-Abort-Reset if DQ5 = 1.
See Instruction Definitions Tables for the command sequence as required for Write Buffer Programming.
When Sector Address is specified, any address in the selected sector is acceptable. However, when loading Write-
Buffer address locations with data, all addresses MUST fall within the selected Write-Buffer Page.
Publication Release Date: Jul 02, 2014
Revision C
28