W28V400B Datasheet, PDF (43/48 Pages) Winbond – 4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY

W28V400B/T
V_DD = 5V ±0.5V, 5V ±0.25V, TA = 0 ° C to +70° C
SYM.
PARAMETER
NOTE ^{VPP = 4.5V − 5.5V}
Typ.(1) Max.
VPP = 11.4V − 12.6V _UNIT
Typ.(1) Max.
32K word Block
2
12.2
Word/Byte Write Time
t_WHQV1
4K word Block
2
18.3
t_EHQV1
32K word Block 2, 4
0.4
Block Write Time
4K word Block
2, 4 0.08
8.4
µS
17
µS
0.28
S
0.07
S
t_WHQV2
t_EHQV2
Block Erase Time
32K word Block
2
0.46
4K word Block
2
0.26
0.39
S
0.25
S
t_WHRH1
t_EHRH1
t_WHRH2
t_EHRH2
Word/Byte Write Suspend Latency Time to
Read
Erase Suspend Latency Time to Read
5
6
4
5
µS
9.6
12
9.6
12 µS
Notes:
1. Typical values measured at TA = +25° C and nominal voltages. Subject to change based on device characterization.
2. Excludes system-level overhead.
3. Sampled but not 100% tested.
4. All values are in word mode (#BYTE = V_IH). At byte mode (#BYTE = V_IL), those values are double.
- 43 -
Publication Release Date: April 11, 2003
Revision A4