W28V400B Datasheet, PDF (30/48 Pages) Winbond – 4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY

W28V400B/T
V_DD = 5V ±0.5V, 5V ±0.25V, TA = 0 ° C to +70° C
PARAMETER
SYM.
V_DD = 5V ±0.25V⁽⁴⁾
MIN. MAX.
5V ±0.5V⁽⁵⁾
MIN. MAX.
UNIT
Read Cycle Time
t_AVAV
85
90
nS
Address to Output Delay
t_AVQV
85
90
nS
#CE to Output Delay (Note 2)
t_ELQV
85
90
nS
#RESET High to Output Delay
t_PHQV
400
400
nS
#OE to Output Delay (Note 2)
t_GLQV
40
45
nS
#CE to Output in Low Z (Note 3)
t_ELQX
0
0
nS
#CE High to Output in High Z (Note 3)
t_EHQZ
55
55
nS
#OE to Output in Low Z (Note 3)
t_GLQX
0
0
nS
#OE High to Output in High Z (Note 3)
t_GHQZ
10
10
nS
Output Hold from Address, #CE or #OE Change,
Whichever Occurs First (Note 3)
t_OH
0
nS
#BYTE to Output Delay (note3)
t_FVQV
85
#BYTE Low to Output in High Z (Note 3)
t_FLQZ
25
#CE to #BYTE High or Low (Note 3, 6)
t_ELFV
5
90
nS
30
nS
5
nS
Notes:
1. See AC Input/Output Reference Waveform for maximum allowable input slew rate.
2. #OE may be delayed up to t_ELQV to t_GLQV after the falling edge of #CE without impact on t_ELQV.
3. Sampled, not 100% tested.
4. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (High Speed Configuration)
for testing characteristics.
5. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (Standard Configuration) for
testing characteristics.
6. If #BYTE transfer during reading cycle, exist the regulations separately.
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