W28V400B Datasheet, PDF (29/48 Pages) Winbond – 4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY

W28V400B/T
AC Characteristics - Read-only Operations(1)
V_DD = 2.7V to 3.6V, TA = 0° C to +70° C
PARAMETER
Read Cycle Time
Address to Output Delay
#CE to Output Delay (Note 2)
#RESET High to Output Delay
#OE to Output Delay (Note 2)
#CE to Output in Low Z (Note 3)
#CE High to Output in High Z (Note 3)
#OE to Output in Low Z (Note 3)
#OE High to Output in High Z (Note 3)
Output Hold from Address −, #CE or #OE Change,
Whichever Occurs First (Note 3)
#BYTE to Output Delay (Note 3)
#BYTE Low to Output in High Z (Note 3)
#CE to #BYTE High or Low (Note 3, 6)
Notes: See 5.0V V_DD Read-only Operations for notes 1 through 6.
SYM.
t_AVAV
t_AVQV
t_ELQV
t_PHQV
t_GLQV
t_ELQX
t_EHQZ
t_GLQX
t_GHQZ
t_OH
t_FVQV
t_FLQZ
t_ELFV
MIN.
120
0
0
0
MAX.
120
120
600
50
55
20
120
30
5
UNIT
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
V_DD = 3.3V ±0.3V, TA = 0 ° C to +70° C
PARAMETER
Read Cycle Time
Address to Output Delay
#CE to Output Delay (Note 2)
#RESET High to Output Delay
#OE to Output Delay (Note 2)
#CE to Output in Low Z (Note 3)
#CE High to Output in High Z (Note 3)
#OE to Output in Low Z (Note 3)
#OE High to Output in High Z (Note 3)
Output Hold from Address, #CE or #OE Change, Whichever
Occurs First (Note 3)
#BYTE to Output Delay (Note 3)
#BYTE Low to Output in High Z (Note 3)
#CE to #BYTE High or Low (Note 3, 6)
Note: See 5.0V V_DD Read-only Operations for notes 1 through 6.
SYM.
t_AVAV
t_AVQV
t_ELQV
t_PHQV
t_GLQV
t_ELQX
t_EHQZ
t_GLQX
t_GHQZ
t_OH
t_FVQV
t_FLQZ
t_ELFV
MIN.
100
0
0
0
MAX.
100
100
600
50
55
20
100
30
5
UNIT
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
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Publication Release Date: April 11, 2003
Revision A4