W28V400B Datasheet, PDF (38/48 Pages) Winbond – 4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY

W28V400B/T
V_DD = 3.3V ±0.3V, TA = 0 ° C to +70° C
PARAMETER
Write Cycle Time
#RESET High Recovery to #CE Going Low (Note 2)
#WE Setup to #CE Going Low
#CE Pulse Width
#RESET V_HH Setup to #CE Going High (Note 2)
#WP V_IH Setup to #CE Going High (Note 2)
V_PP Setup to #CE Going High (Note2)
Address Setup to #CE Going High (Note 3)
Data Setup to #CE Going High (Note 3)
Data Hold from #CE High
Address Hold from #CE High
#WE Hold from #CE High
#CE Pulse Width High
#CE High to RY/#BY Going Low
Write Recovery before Read
V_PP Hold from Valid SRD, RY/#BY High (Note 2, 4)
#RESET V_HH Hold from Valid SRD, RY/#BY High (Note 2, 4)
#WP V_IH Hold from Valid SRD, RY/#BY High (Note 2, 4)
#BYTE Setup to #CE Going High (Note 7)
#BYTE Hold from #CE High (Note 7)
SYM.
t_AVAV
t_PHEL
t_WLEL
t_ELEH
t_PHHEH
t_SHEH
t_VPEH
t_AVEH
t_DVEH
t_EHDX
t_EHAX
t_EHWH
t_EHEL
t_EHRL
t_EHGL
t_QVVL
T_QVPH
t_QVSL
t_FVEH
t_EHFV
Note: See 5.0V V_DD Alternative #CE-Controlled Writes for notes 1 through 7.
MIN.
100
1
0
70
100
100
100
50
50
0
5
0
25
0
0
0
0
50
100
MAX.
100
UNIT
nS
µS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
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