W28V400B Datasheet, PDF (42/48 Pages) Winbond – 4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY

W28V400B/T
Block Erase And Word/Byte Write Performance(3)
V_DD = 2.7V to 3.6V, TA = 0° C to +70° C
SYM.
PARAMETER
NOTE ^{VPP = 2.7V − 3.6V VPP = 4.5V − 5.5V VPP = 11.4V − 12.6V} UNIT
TYP.(1) MAX. TYP.(1) MAX. TYP.(1) MAX.
Word/Byte Write ^{32K word Block 2}
t_WHQV1 ^Time
4K word Block 2
t_EHQV1
32K word Block 2, 4
Block Write Time
4K word Block 2, 4
44.6
45.9
1.46
0.19
17.7
12.6
µS
26.1
24.5
µS
0.58
0.42
S
0.11
0.11
S
t_WHQV2
t_EHQV2
Block Erase Time
32K word Block
4K word Block
2
2
1.14
0.38
0.61
0.51
S
0.32
0.31
S
t_WHRH1
t_EHRH1
t_WHRH2
t_EHRH2
Word/Byte Write Suspend Latency
Time to Read
Erase Suspend Latency Time to
Read
7
8
6
8
6
7 µS
18
22
11 14
11
14 µS
Note: See 5V V_DD Block Erase and Word/Byte Write Performance for Notes 1 through 4.
V_DD = 3.3V ±0.3V, TA = 0 ° C to +70° C
SYM.
PARAMETER
NOTE ^{VPP = 2.7V − 3.6V VPP = 4.5V − 5.5V VPP = 11.4V − 12.6V} UNIT
Typ.(1) Max. Typ.(1) Max. Typ.(1) Max.
Word/Byte Write ^{32K word Block 2}
t_WHQV1 ^Time
4K word Block 2
t_EHQV1
32K word Block 2, 4
Block Write Time
4K word Block 2, 4
44
45
1.44
0.19
17.3
12.3
µS
25.6
24
µS
0.57
0.41
S
0.11
0.1
S
t_WHQV2
t_EHQV2
Block Erase Time
32K word Block
4K word Block
2
2
1.11
0.37
0.59
0.31
0.5
0.3
S
S
t_WHRH1 Word/Byte Write Suspend Latency
t_EHRH1 Time to Read
t_WHRH2 Erase Suspend Latency Time to
t_EHRH2 Read
6
7
5
7
5
6 µS
16.2 20
9.6 12
9.6
12 µS
Note: See 5V V_DD Block Erase and Word/Byte Write Performance for Notes 1 through 4.
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