W28V400B Datasheet, PDF (35/48 Pages) Winbond – 4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY

W28V400B/T
V_DD = 5V ±0.5V, 5V ±0.25V, TA = 0 ° C to +70° C
PARAMETER
SYM.
5V ±0.25V(5)
MIN. MAX.
5V ±0.5V(6)
MIN MAX.
UNIT
Write Cycle Time
t_AVAV
85
90
nS
#RESET High Recovery to #WE Going Low
(Note 2)
t_PHWL
1
1
µS
#CE Setup to #WE Going Low
#WE Pulse Width
#RESET V_HH Setup to #WE Going High (Note 2)
#WP V_IH Setup to #WE Going High (Note 2)
V_PP Setup to #WE Going High (Note 2)
Address Setup to #WE Going High (Note 3)
Data Setup to #WE Going High (Note 3)
Data Hold from #WE High
Address Hold from #WE High
#CE Hold from #WE High
#WE Pulse Width High
#WE High to RY/#BY Going Low
Write Recovery before Read
V_PP Hold from Valid SRD, RY/#BY High
(Note 2, 4)
t_ELWL
10
10
nS
t_WLWH
40
40
nS
T_PHHWH
100
100
nS
t_SHWH
100
100
nS
t_VPWH
100
100
nS
t_AVWH
40
40
nS
t_DVWH
40
40
nS
t_WHDX
0
0
nS
t_WHAX
5
5
nS
t_WHEH
10
10
nS
t_WHWL
30
30
nS
t_WHRL
90
90
nS
t_WHGL
0
0
nS
t_QVVL
0
0
nS
#RESET V_HH Hold from Valid SRD, RY/BY# High
(Note 2, 4)
T_QVPH
0
0
#WP V_IH Hold from Valid SRD, RY/#BY High
(Note 2, 4)
t_QVSL
0
0
nS
#BYTE Setup to #WE Going High (Note 7)
#BYTE Hold from #WE High (Note 7)
t_FVWH
40
40
nS
t_WHFV
85
90
nS
Notes:
1. Read timing characteristics during block erase and word/byte write operations are the same as during read-only operations.
Refer to AC Characteristics for read-only operations.
2. Sampled, not 100% tested.
3. Refer to Table 4 for valid AIN and DIN for block erase or word/byte write.
4. V_PP should be held at V_PPH1/2/3 (and if necessary #RESET should be held at V_HH) until determination of block erase or
word/byte write success (SR.1/3/4/5 = 0).
5. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (High Seed Configuration) for
testing characteristics.
6. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (Standard Configuration) for
testing characteristics.
7. If #BYTE switch during reading cycle, exist the regulations separately.
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Publication Release Date: April 11, 2003
Revision A4