W28V400B Datasheet, PDF (27/48 Pages) Winbond – 4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY

W28V400B/T
DC Characteristics
PARAMETER
SYM.
TEST
CONDITIONS
V_DD = 2.7V− 3.6V V_DD = 5V ±0.5 _UNIT
Typ. Max. Typ. Max.
Input Load Current (Note1)
Output Leakage Current (Note1)
V_DD Standby Current
(Note 1, 3, 6, 10)
V_DD Reset Power-down Current
(Note 1, 10)
I_LI
V_DD = V_DD Max.
VIN = V_DD or V_SS
I_LO
V_DD = V_DD Max.
VOUT = V_DD or V_SS
CMOS Level Inputs V_DD = V_DD Max.
#CE = #RESET = V_DD ±0.2V
25
I_{CCS TTL Level Inputs}
V_DD = V_DD Max.
0.2
#CE = #RESET = V_IH
I_CCD
#RESET = V_SS ±0.2V
IOUT(RY/#BY) = 0 mA
4
±0.5
±1 µA
±0.5
±10 µA
50 30 100 µA
2 0.4 2 mA
10
10 µA
V_DD Read Current
(Note 1, 5, 6)
CMOS Inputs
V_DD = V_DD Max., #CE = V_SS,
f = 5 MHz (3.3V ±0.3),
f = 5 MHz (2.7V − 3.6V)
15
25
f = 8 MHz (5V+ 0.5V)
I_CCR ^{IOUT = 0 mA}
TTL Inputs
V_DD = V_DD Max., #CE = V_SS,
f = 5 MHz (3.3V ±0.3),
30
f = 5 MHz (2.7V − 3.6V)
f = 8 MHz (5V ±0.5V), IOUT = 0 mA
50 mA
65 mA
V_DD Word/Byte Write Current
(Note 1, 7)
V_PP = 2.7V − 3.6V
I_CCW
V_PP = 4.5V − 5.5V
V_PP = 11.4V − 12.6V
5
17
-
- mA
5
17
35 mA
5
12
30 mA
V_DD Block Erase Current
(Note 1, 7)
V_PP = 2.7V − 3.6V
I_CCE V_PP = 4.5V − 5.5V
V_PP = 11.4V − 12.6V
4
17
-
- mA
4
17
30 mA
4
12
25 mA
V_DD Word/Byte Write or Block Erase
Suspend Current (Note1, 2)
I_CCWS
I_CCES
#CE = V_IH
1
6
1
10 mA
V_PP Standby or Read Current (Note1)
I_PPS
I_CPPR
V_PP ≤ V_DD
V_PP > V_DD
±2 ±15 ±2 ±15 µA
10 200 10 200 µA
V_PP Deep Power-Down Current (Note1) I_PPD #RESET = V_SS ±0.2V
0.1
5
0.1
5
µA
V_PP Word/Byte Write Current
(Note 1, 7)
V_PP Block Erase Current (Note 1, 7)
V_PP = 2.7V − 3.6V
I_PPW V_PP = 4.5V − 5.5V
V_PP = 11.4V − 12.6V
V_PP = 2.7V − 3.6V
I_PPE V_PP = 4.5V − 5.5V
12
40
-
- mA
40
40 mA
30
30 mA
8
25
-
- mA
25
25 mA
V_PP Word/Byte Write or Block Erase
Suspend Current (Note 1)
I_PPWS
I_PPES
V_PP = 11.4V − 12.6V
V_PP = V_PPH1/2/3
20
20 mA
10 200 10 200 µA
- 27 -
Publication Release Date: April 11, 2003
Revision A4