70-W424NIA800SH-M800F Datasheet, PDF (9/32 Pages) Vincotech – Snubber diode for optional asymmetrical inductance

Figure 9
Typical switching times as a
function of collector current
t = f(I _C)
10,00
1,00
t_don
t_doff
0,10
t_f
t_r
0,01
70-W424NIA800SH-M800F
datasheet
Buck
Buck IGBT and Buck FWD
IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R _G)
1,00
t_doff
0,10
t_don
0,01
IGBT
t_r
t_f
0,00
0,00
0
250
500
750
1000
1250 _{I C (A)} 1500
0,0
0,5
1,0
1,5
With an inductive load at
T_j =
125
°C
V _CE =
600
V
V _GE =
±15
V
R _gon =
0,5
Ω
R _goff =
0,6
Ω
With an inductive load at
T_j =
125
°C
V _CE =
600
V
V _GE =
±15
V
I_C =
824
A
Figure 11
Typical reverse recovery time as a
function of collector current
t _rr = f(I _c)
0,25
0,20
0,15
FWD
t_{rr High T}
t_{rr Low T}
0,10
0,05
0,00
0
At
T_j =
V _CE =
V _GE =
R _gon =
200
400
600
25/125 °C
600
V
±15
V
0,5
Ω
800
1000
1200
1400
1600
I C (A)
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t _rr = f(R _gon)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0
1
1
2
At
T_j =
V_R =
I_F =
V _GE =
25/125 °C
600
V
824
A
±15
V
2,0 R _G ( Ω) 2,5
FWD
t_{rr High T}
t_{rr Low T}
2
R gon ( Ω) 3
copyright Vincotech
9
14 Nov 2015 / Revision 4