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| 70-W424NIA800SH-M800F Datasheet, PDF (18/32 Pages) Vincotech – Snubber diode for optional asymmetrical inductance | |||
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70-W424NIA800SH-M800F
datasheet
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
18000
dIrec/dt T
di0/dt T
15000
12000
9000
6000
3000
Boost
Boost IGBT and Boost FWD
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon)
17500
dIrec/dt T
15000
dI0/dt T
12500
10000
7500
5000
2500
FWD
0
0
200
400
600
At
Tj =
V CE =
V GE =
R gon =
25/125 °C
600
V
±15
V
0,5
â¦
800
1000
1200
1400
1600I C (A)1800
Figure 19
IGBT transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
10-1
IGBT
0
0
1
2
3
At
Tj =
VR =
IF =
V GE =
25/125 °C
600
V
796
A
±15
V
Figure 20
FWD transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
10-1
4
R gon ( â¦) 5
FWD
10-2
10-2
10-3
10-3
10-4
10-5
At
D=
R thJH =
10-4
tp / T
0,058
10-3
K/W
10-2
10-1
100
t p (s) 101 10
R thJC =
0,038
IGBT thermal model values
With thermal grease
R (K/W) Tau (s)
0,0060 9,881
0,0238 2,747
0,0103 0,6136
0,0066 0,1357
0,0100 0,0302
0,0009 0,0035
With phase change interface
R (K/W) Tau (s)
0,0058 9,881
0,0231 2,747
0,01
0,6136
0,0064 0,1357
0,0097 0,0302
0,0009 0,0035
10-4
10-5
At
D=
R thJH =
10-4
tp / T
0,105
10-3
K/W
10-2
10-1
100
t p (s) 10110
R thJC =
0,067
FWD thermal model values
With thermal grease
R (K/W) Tau (s)
0,0104 8,269
0,0336 1,883
0,0241 0,4658
0,0274 0,0479
0,0062 0,0119
0,0033 0,0012
With phase change interface
R (K/W) Tau (s)
0,0101 8,269
0,0326 1,883
0,0233 0,4658
0,0266 0,0479
0,0060 0,0119
0,0032 0,0012
copyright Vincotech
18
14 Nov 2015 / Revision 4
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