70-W424NIA800SH-M800F Datasheet, PDF (2/32 Pages) Vincotech – Snubber diode for optional asymmetrical inductance

70-W424NIA800SH-M800F
datasheet
T _j=25°C, unless otherwise specified
Parameter
Maximum Ratings
Symbol
Condition
Buck Diode (D11, D12)
Peak Repetitive Reverse Voltage
DC forward current
Surge Forward Current
Power dissipation
Maximum Junction Temperature
Boost IGBT (T13, T14)
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
Boost Inverse Diode (D15, D16)
Peak Repetitive Reverse Voltage
DC forward current
Repetitive Forward Current
Power dissipation
Maximum Junction Temperature
Boost Diode (D14, D13)
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
V _RRM
I_F
I _FSM
P _tot
T _jmax
T _j=T _jmax
t _p=10ms, sin 180º
T _j=T _jmax
V _CE
I_C
I _CRM
P _tot
V _GE
t _SC
V _CC
T _jmax
T _j=T _jmax
t _p limited by T _jmax
T _j=T _jmax
T _j≤150°C
V _GE=15V
V _RRM
I_F
I _FRM
P _tot
T _jmax
T _j=T _jmax
t _p limited by T _jmax
T _j=T _jmax
V _RRM
I_F
I _FRM
P _tot
T _jmax
T _j=T _jmax
t _p limited by T _jmax
T _j=T _jmax
T _s=80°C
T _c=80°C
T _s=80°C
T _c=80°C
T _s=80°C
T _c=80°C
T _s=80°C
T _c=80°C
T _s=80°C
T _c=80°C
T _s=80°C
T _c=80°C
T _s=80°C
T _c=80°C
T _s=80°C
T _c=80°C
Value
Unit
1200
V
540
A
711
4400
A
1131
W
1713
175
°C
1200
V
689
A
883
2400
A
1652
W
2503
±20
V
10
µs
800
V
175
°C
1200
V
680
A
680
1200
A
1759
W
2666
175
°C
1200
V
514
A
685
1200
A
905
W
1371
175
°C
copyright Vincotech
2
14 Nov 2015 / Revision 4