70-W424NIA800SH-M800F Datasheet, PDF (8/32 Pages) Vincotech – Snubber diode for optional asymmetrical inductance

70-W424NIA800SH-M800F
datasheet
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I _C)
100
80
60
Buck
Buck IGBT and Buck FWD
IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R _G)
140
120
100
80
60
40
40
20
20
0
0
200
400
600
800
1000
1200
1400 _{I C (A)} 1600
0
0,0
0,5
1,0
1,5
With an inductive load at
T_j =
25/125 °C
V _CE =
600
V
V _GE =
±15
V
R _gon =
0,5
Ω
R _goff =
0,6
Ω
With an inductive load at
T_j =
25/125 °C
V _CE =
600
V
V _GE =
±15
V
I_C =
824
A
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E _rec = f(I _c)
80
FWD
60
40
E_{rec Low T}
20
0
0
200
400
600
With an inductive load at
T_j =
V _CE =
V _GE =
R _gon =
25/125 °C
600
V
±15
V
0,5
Ω
800
1000
1200
1400
1600
I C (A)
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E _rec = f(R _G)
70
60
50
40
30
20
10
0
0,0
0,5
1,0
1,5
With an inductive load at
T_j =
V _CE =
V _GE =
I_C =
25/125 °C
600
V
±15
V
824
A
IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
2,0 _{R G ( Ω)} 2,5
FWD
E_{rec High T}
E_{rec Low T}
2,0
R G ( Ω) ^2,5
copyright Vincotech
8
14 Nov 2015 / Revision 4