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| 70-W424NIA800SH-M800F Datasheet, PDF (11/32 Pages) Vincotech – Snubber diode for optional asymmetrical inductance | |||
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70-W424NIA800SH-M800F
datasheet
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
25000
dIrec/dt T
dIo/dt T
20000
15000
10000
5000
0
0
250
At
Tj =
V CE =
V GE =
R gon =
25/125
600
±15
0,5
500
°C
V
V
â¦
750
1000
Buck
Buck IGBT and Buck FWD
FWD
1250 I C (A) 1500
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon)
36000
32000
dIrec/dt T
dI0/dt T
FWD
28000
24000
20000
16000
12000
8000
4000
0
0,0
0,5
1,0
1,5
2,0 R gon ( â¦) 2,5
At
Tj =
VR =
IF =
V GE =
25/125 °C
600
V
824
A
±15
V
Figure 19
IGBT transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
10-1
IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
10-1
FWD
10-2
10-2
10-3
10-3
10-4
10-5
At
D=
R = thJH
10-4
10-3
tp / T
0,054
K/W
10-2
10-1
100
t p (s) 1011
R thJC =
0,035
K/W
IGBT thermal model values
With thermal grease
R (K/W) Tau (s)
0,0224 3,378
0,0101 0,6296
0,0066 0,1078
0,0105 0,0309
0,0020 0,0049
0,0025 0,0005
With phase change interface
R (K/W) Tau (s)
0,0217
3,378
0,0098
0,6296
0,0064
0,1078
0,0102
0,0309
0,0020
0,0049
0,0024
0,0005
10-4
10-5
At
D=
R thJH =
10-4
tp / T
0,084
10-3
K/W
10-2
10-1
100
t p (s) 1011
R thJC =
0,054
K/W
FWD thermal model values
With thermal grease
R (K/W) Tau (s)
0,0091 8,788
0,0156 1,882
0,0159 0,3424
0,0215 0,0747
0,0166 0,0242
0,0052 0,0022
With phase change interface
R (K/W) Tau (s)
0,0089
8,788
0,0152
1,882
0,0155
0,3424
0,0208
0,0747
0,0161
0,0242
0,0050
0,0022
copyright Vincotech
11
14 Nov 2015 / Revision 4
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