70-W424NIA800SH-M800F Datasheet, PDF (14/32 Pages) Vincotech – Snubber diode for optional asymmetrical inductance

70-W424NIA800SH-M800F
datasheet
Figure 1
Typical output characteristics
I _C = f(V _CE)
1800
1600
1400
1200
1000
800
600
400
200
0
0
1
2
3
At
t_p =
T_j =
V _GE from
350
µs
25
°C
7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
I _C = f(V _GE)
800
700
600
500
400
300
200
100
0
0
2
4
6
8
At
t_p =
350
µs
V _CE =
10
V
Boost
Boost IGBT and Boost FWD
IGBT
4
V CE (V)
5
Figure 2
Typical output characteristics
I _C = f(V _CE)
1800
1600
1400
1200
1000
800
600
400
200
0
0
1
2
3
At
t_p =
T_j =
V _GE from
350
µs
125
°C
7 V to 17 V in steps of 1 V
IGBT
10 _{V GE (V)} 12
Figure 4
Typical FWD forward current as
a function of forward voltage
I _F = f(V _F)
1800
1600
1400
1200
1000
800
600
400
200
0
0
1
2
At
t_p =
350
µs
IGBT
4
V CE (V) 5
FWD
3
V F (V)
4
copyright Vincotech
14
14 Nov 2015 / Revision 4