70-W424NIA800SH-M800F Datasheet, PDF (10/32 Pages) Vincotech – Snubber diode for optional asymmetrical inductance

70-W424NIA800SH-M800F
datasheet
Figure 13
Typical reverse recovery charge as a
function of collector current
Q _rr = f(I _C)
200
150
Buck
Buck IGBT and Buck FWD
FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q _rr = f(R _gon)
150
Q_{rr High T}
125
100
100
Q_{rr Low T}
75
50
50
25
0
0
At
200
400
600
800
1000
1200
1400 _{I C (A}1₎ 600
0
0
0,5
1
1,5
At
At
T_j =
V _CE =
V _GE =
R _gon =
25/125 °C
600
V
±15
V
0,5
Ω
T_j =
V_R =
I_F =
V _GE =
25/125 °C
600
V
824
A
±15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I _RRM = f(I _C)
1600
1400
FWD
I_{RRM High T}
1200
1000
I_{RRM Low T}
800
600
400
200
0
0
200
400
600
At
T_j =
V _CE =
V _GE =
R _gon =
25/125 °C
600
V
±15
V
0,5
Ω
800
1000
1200
1400
1600
I C (A)
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I _RRM = f(R _gon)
1800
1600
1400
1200
1000
800
600
400
200
0
0,0
0,5
1,0
1,5
At
T_j =
V_R =
I_F =
V _GE =
25/125 °C
600
V
824
A
±15
V
FWD
Q_{rr High T}
Q_{rr Low T}
2
R gon ( Ω) ^2,5
FWD
I_{RRM High T}
I_{RRM Low T}
2,0 _{R gon ( Ω)} 2,5
copyright Vincotech
10
14 Nov 2015 / Revision 4