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70-W424NIA800SH-M800F Datasheet, PDF (5/32 Pages) Vincotech – Snubber diode for optional asymmetrical inductance
70-W424NIA800SH-M800F
datasheet
Parameter
Symbol
Characteristic values
Conditions
V GE [V]
or
V GS [V]
V r [V]
or
V CE [V]
or
V DS [V]
I C [A]
or
I F [A]
or
I D [A]
T j [°C]
Value
Unit
Min Typ Max
Boost IGBT (T13, T14)
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink
Thermal resistance chip to case
Boost Inverse Diode (D15, D16)
Diode forward voltage
Thermal resistance chip to heatsink
Thermal resistance chip to case
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
tr
t d(off)
tf
E on
E off
C ies
C oss
C rss
QG
R th(j-s)
R th(j-c)
V CE=V GE
R goff=0,5 Ω
R gon=0,5 Ω
f=1MHz
phase-change
material
λ = 3,4 W/mK
VF
R th(j-s)
R th(j-c)
phase-change
material
λ = 3,4 W/mK
15
0
20
±15
0
15
1200
0
600
25
0,0304
25
125
800
25
125
25
125
25
125
25
125
25
125
25
800
125
25
125
25
125
25
125
25
960
800
25
25
600
125
5
1,55
5,80
1,91
2,14
0,9375
290
301
57
60
384
455
43
108
49
65
49
76
49200
3240
2760
4060
0,058
0,038
6,5
2,05
0,104
4800
V
V
mA
nA
Ω
ns
mWs
pF
nC
K/W
1,35
1,90
1,84
0,054
0,036
2,05
V
K/W
Boost Diode (D14, D13)
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Thermal resistance chip to heatsink
Thermal resistance chip to case
VF
Ir
I RRM
t rr
Q rr
R gon=0,5 Ω
( di rf/dt )max
E rec
R th(j-s)
R th(j-c)
phase-change
material
λ = 3,4 W/mK
±15
600
1200
600
800
25
125
25
125
25
125
25
125
25
125
25
125
25
125
1,35
1,90
1,84
576
806
271
341
63
118
4456
6686
23
47
0,102
0,067
2,05
112
V
µA
A
ns
µC
A/µs
mWs
K/W
copyright Vincotech
5
14 Nov 2015 / Revision 4