70-W424NIA800SH-M800F Datasheet, PDF (27/32 Pages) Vincotech – Snubber diode for optional asymmetrical inductance

70-W424NIA800SH-M800F
datasheet
Boost switching definitions
General conditions
T_j
= 125 °C
R _gon
= 0,625 Ω
R _goff
= 0,625 Ω
Test setup inductance: 9nH
Figure 1
Boost IGBT
Figure 2
Boost IGBT
Turn-off Switching Waveforms & definition of t _doff, t _Eoff
(t _{E off} = integrating time for E _off)
Turn-on Switching Waveforms & definition of t _don, t _Eon
(t _{E on} = integrating time for E _on)
150
150
%
125
%
125
100
75
V_{GE 90%}
50
V_{CE 90%}
100
75
t_don
50
25
25
I_{C 1%}
V_{GE 10%}
I_{C 10%}
V_{CE 3%}
0
0
-25
-0,1
0,1
V _GE (0%) =
V _GE (100%) =
V _C (100%) =
I _C (100%) =
t _doff =
t _{E off} =
0,3
0,5
-8
V
15
V
600
V
827
A
0,34
µs
0,70
µs
0,7
0,9
time (us)
Figure 3
Boost IGBT
Turn-off Switching Waveforms & definition of t _f
150
%
125
fitted
100
I_{c 90%}
75
I_{c 60%}
50
I_{c 40%}
25
I_{c 10%}
0
-25
0,1
0,2
0,3
0,4
0,5
0,6
0,7
time (us)
V _C (100%) =
I _C (100%) =
t_f =
600
V
827
A
0,079
µs
-25
2,8
3
V _GE (0%) =
V _GE (100%) =
V _C (100%) =
I _C (100%) =
t _don =
t _{E on} =
3,2
3,4
-8
V
15
V
600
V
827
A
0,18
µs
0,47
µs
3,6
3,8
time(us)
Figure 4
Boost IGBT
Turn-on Switching Waveforms & definition of t _r
150
%
125
100
I_{C 90%}
75
50
25
I_{C 10%}
0
-25
3
3,1
3,2
3,3
V _C (100%) =
I _C (100%) =
t_r =
600
V
827
A
0,072 µs
3,4 _time(us) 3,5
copyright Vincotech
27
14 Nov 2015 / Revision 4