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70-W424NIA800SH-M800F Datasheet, PDF (7/32 Pages) Vincotech – Snubber diode for optional asymmetrical inductance
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Figure 1
Typical output characteristics
I C = f(V CE)
1800
1600
1400
1200
1000
800
600
400
200
0
0
1
2
3
At
tp =
Tj =
V GE from
350
µs
25
°C
7 V to 17 V in steps of 1 V
70-W424NIA800SH-M800F
datasheet
Buck
Buck IGBT and Buck FWD
IGBT
4
V CE (V) 5
Figure 2
Typical output characteristics
I C = f(V CE)
1800
1600
1400
1200
1000
800
600
400
200
0
0
1
2
3
At
tp =
Tj =
V GE from
350
µs
125
°C
7 V to 17 V in steps of 1 V
IGBT
4
V CE (V) 5
Figure 3
Typical transfer characteristics
I C = f(V GE)
700
IGBT
Figure 4
Typical FWD forward current as
a function of forward voltage
I F = f(V F)
1750
600
1500
500
1250
400
1000
300
750
200
500
100
250
0
0
0
2
4
6
8
10
12
V GE (V)
0
1
2
At
tp =
350
µs
V CE =
10
V
At
tp =
350
µs
FWD
3
V F (V) 4
copyright Vincotech
7
14 Nov 2015 / Revision 4
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