70-W424NIA800SH-M800F Datasheet, PDF (4/32 Pages) Vincotech – Snubber diode for optional asymmetrical inductance

70-W424NIA800SH-M800F
datasheet
Parameter
Snubber Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Thermal resistance chip to heatsink
Thermal resistance chip to case
Buck IGBT (T11, T12)
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink
Thermal resistance chip to case
Buck Diode (D11, D12)
Diode forward voltage
Reverse leakage current
Reverse recovery time
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink
Thermal resistance chip to case
Symbol
Characteristic values
Conditions
V _GE [V]
or
V _GS [V]
V _r [V]
or
V _CE [V]
or
V _DS [V]
I _C [A]
or
I _F [A]
or
I _D [A]
T _j [°C]
Value
Unit
Min Typ Max
V_F
V _to
r_t
I_r
R _th(j-s)
R _th(j-c)
phase-change
material
λ = 3,4 W/mK
200
25
125
200
25
125
200
25
125
1200
25
150
1,91
1,85
1,25
1,11
0,003
0,004
0,294
0,194
2,54
0,12
V
V
mΩ
mA
K/W
V _GE(th)
V _CEsat
I _CES
I _GES
R _gint
t _d(on)
t_r
t _d(off)
t_f
E _on
E _off
C _ies
C _oss
C _rss
Q_G
R _th(j-s)
R _th(j-c)
V CE=V GE
R goff=0,5 Ω
R gon=0,5 Ω
f=1MHz
phase-change
material
λ = 3,4 W/mK
15
0
20
±15
0
±15
1200
0
600
25
0,0272
25
125
800
25
125
25
125
25
125
25
125
25
125
25
824
125
25
125
25
125
25
125
25
960
800
25
V_F
I_R
I _RRM
t _rr
Q _rr
R gon=0,5 Ω
( di _rf/dt )_max
E _rec
R _th(j-s)
R _th(j-c)
phase-change
material
λ = 3,4 W/mK
±15
800
1200
600
824
25
125
25
125
25
125
25
125
25
125
25
125
25
125
5,2
5,8
6,4
V
1,7
2,14
2,4
V
2,44
0,096
mA
1920
nA
0,25
151
135
42
40
195
231
24
48
41
50
26
43
44320
Ω
ns
mWs
2600
pF
2560
3700
nC
0,052
0,035
K/W
2,34
2,38
932
1319
165
193
64
136
16722
16606
22
56
0,081
0,054
2,52
960
V
µA
A
ns
µC
A/µs
mWs
K/W
copyright Vincotech
4
14 Nov 2015 / Revision 4