70-W424NIA800SH-M800F Datasheet, PDF (15/32 Pages) Vincotech – Snubber diode for optional asymmetrical inductance

70-W424NIA800SH-M800F
datasheet
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I _C)
180
150
120
90
Boost
Boost IGBT and Boost FWD
IGBT
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R _G)
180
E_{on High T}
150
E_{off High T}
120
E_{on Low T}
E_{off Low T}
90
60
60
30
30
0
0
200
400
600
With an inductive load at
T_j =
25/125 °C
V _CE =
600
V
V _GE =
±15
V
R _gon =
0,5
Ω
R _goff =
0,5
Ω
800
1000
1200
1400
1600_{I C (A)} 1800
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E _rec = f(I _c)
70
60
FWD
E_{rec High T}
50
40
E_{rec Low T}
30
20
10
0
0
200
400
600
800
1000 1200 1400 1600 1800
I C (A)
With an inductive load at
T_j =
V _CE =
V _GE =
R _gon =
25/125 °C
600
V
±15
V
0,5
Ω
0
0
1
2
3
With an inductive load at
T_j =
25/125 °C
V _CE =
600
V
V _GE =
±15
V
I_C =
796
A
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E _rec = f(R _G)
60
50
40
30
20
10
0
0
1
2
3
With an inductive load at
T_j =
V _CE =
V _GE =
I_C =
25/125 °C
600
V
±15
V
796
A
IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
4 _RG(Ω) 5
FWD
E_{rec High T}
E_{rec Low T}
4
5
R_G (Ω)
copyright Vincotech
15
14 Nov 2015 / Revision 4