70-W424NIA800SH-M800F Datasheet, PDF (17/32 Pages) Vincotech – Snubber diode for optional asymmetrical inductance

70-W424NIA800SH-M800F
datasheet
Figure 13
Typical reverse recovery charge as a
function of collector current
Q _rr = f(I _C)
180
150
120
90
60
30
Boost
Boost IGBT and Boost FWD
FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q _rr = f(R _gon)
150
Q_{rr High T}
120
Q_{rr Low T}
90
60
30
0
0
At
200
400
600
800
1000 1200 1400 1600 1800
I C (A)
0
0
1
2
3
At
At
T_j =
V _CE =
V _GE =
R _gon =
25/125 °C
600
V
±15
V
0,5
Ω
T_j =
V_R =
I_F =
V _GE =
25/125 °C
600
V
796
A
±15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I _RRM = f(I _C)
800
600
400
200
FWD
I_{RRM High T}
I_{RRM Low T}
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I _RRM = f(R _gon)
1000
800
600
400
200
0
0
400
800
1200
1600 _{I C (A)} 2000
0
0
1
2
3
At
T_j =
V _CE =
V _GE =
R _gon =
25/125 °C
600
V
±15
V
0,5
Ω
At
T_j =
V_R =
I_F =
V _GE =
25/125 °C
600
V
796
A
±15
V
FWD
Q_{rr High T}
Q_{rr Low T}
4
5
R gon ( Ω)
FWD
I_{RRM High T}
I_{RRM Low T}
4
R gon ( Ω) ⁵
copyright Vincotech
17
14 Nov 2015 / Revision 4