70-W424NIA800SH-M800F Datasheet, PDF (16/32 Pages) Vincotech – Snubber diode for optional asymmetrical inductance

70-W424NIA800SH-M800F
datasheet
Figure 9
Typical switching times as a
function of collector current
t = f(I _C)
1
t_doff
Boost
Boost IGBT and Boost FWD
IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R _G)
1
t_don
0,1
0,1
t_f
t_r
0,01
0,01
0
200
400
600
800
1000
1200
1400
1600 _{I C (A}1₎800
0
1
2
3
With an inductive load at
T_j =
125
°C
V _CE =
600
V
V _GE =
±15
V
R _gon =
0,5
Ω
R _goff =
0,5
Ω
With an inductive load at
T_j =
125
°C
V _CE =
600
V
V _GE =
±15
V
I_C =
796
A
Figure 11
Typical reverse recovery time as a
function of collector current
t _rr = f(I _c)
0,6
0,5
FWD
t_{rr High T}
0,4
t_{rr Low T}
0,3
0,2
0,1
0
0
At
T_j =
V _CE =
V _GE =
R _gon =
200
400
600
800
1000 1200 1400 1600 1800
I C (A)
25/125 °C
600
V
±15
V
0,5
Ω
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t _rr = f(R _gon)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0
0
1
2
3
At
T_j =
V_R =
I_F =
V _GE =
25/125 °C
600
V
796
A
±15
V
IGBT
t_doff
t_don
t_r
t_f
4
5
RG(Ω )
FWD
t_{rr High T}
t_{rr Low T}
4
R gon ( Ω) ⁵
copyright Vincotech
16
14 Nov 2015 / Revision 4