DRV8302_16 Datasheet, PDF (7/32 Pages) Texas Instruments – Three Phase Gate Driver

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DRV8302
SLES267C – AUGUST 2011 – REVISED MARCH 2016
6.5 Electrical Characteristics
PVDD = 8 V to 60 V, T_C = 25°C, unless specified under test condition
PARAMETER
TEST CONDITIONS
INPUT PINS: INH_X, INL_X, M_PWM, M_OC, GAIN, EN_GATE, DC_CAL
V_IH
V_IL
R_{EN_GATE}
R_{INH_X}
High input threshold
Low input threshold
Internal pulldown resistor for EN_GATE
Internal pulldown resistor for high side PWMs
(INH_A, INH_B, and INH_C)
EN_GATE high
R_{INH_X}
Internal pulldown resistor for low side PWMs
(INL_A, INL_B, and INL_C)
EN_GATE high
R_{M_PWM}
Internal pulldown resistor for M_PWM
R_{M_OC}
Internal pulldown resistor for M_OC
R_{DC_CAL}
Internal pulldown resistor for DC_CAL
OUTPUT PINS: nFAULT AND nOCTW
EN_GATE high
EN_GATE high
EN_GATE high
V_OL
Low output threshold
V_OH
High output threshold
I_O = 2 mA
External 47-kΩ pullup resistor connected to
3-5.5 V
I_OH
Leakage current on open-drain pins When logic
high (nFAULT and nOCTW)
GATE DRIVE OUTPUT: GH_A, GH_B, GH_C, GL_A, GL_B, GL_C
V_{GX_NORM}
I_oso1
I_osi1
R_{gate_off}
Gate driver Vgs voltage
Maximum source current setting 1, peak
Maximum sink current setting 1, peak
Gate output impedance during standby mode
when EN_GATE low (pins GH_x, GL_x)
PVDD = 8 V to 60 V
Vgs of FET equals to 2 V
Vgs of FET equals to 8 V
SUPPLY CURRENTS
I_{PVDD1_STB} PVDD1 supply current, standby
I_{PVDD1_OP} PVDD1 supply current, operating
EN_GATE is low. PVDD1 = 8 V.
EN_GATE is high, no load on gate drive
output, switching at 10 kHz,
100-nC gate charge
I_{PVDD1_HIZ} PVDD1 Supply current, HiZ
INTERNAL REGULATOR VOLTAGE
EN_GATE is high, gate not switching
A_VDD
AVDD voltage
D_VDD
DVDD voltage
VOLTAGE PROTECTION
V_{PVDD_UV} Undervoltage protection limit, PVDD
V_{GVDD_UV} Undervoltage protection limit, GVDD
V_{GVDD_OV} Overvoltage protection limit, GVDD
CURRENT PROTECTION, (VDS SENSING)
V_{DS_OC}
T_oc
T_{OC_PULSE}
Drain-source voltage protection limit
OC sensing response time
OCTW pin reporting pulse stretch length for OC
event
MIN TYP MAX UNIT
2
V
0.8 V
100
kΩ
100
kΩ
100
kΩ
100
kΩ
100
kΩ
100
kΩ
0.4 V
2.4
V
1 µA
9.5
11.5 V
1.7
A
2.3
A
1.6
2.4 kΩ
20 50 µA
15
mA
2 5 11 mA
6 6.5 7 V
3 3.3 3.6 V
6V
8V
16
V
0.125
2.4 V
1.5
µs
64
µs
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