DRV8302_16 Datasheet, PDF (13/32 Pages) Texas Instruments – Three Phase Gate Driver

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DRV8302
SLES267C – AUGUST 2011 – REVISED MARCH 2016
7.3 Feature Description
7.3.1 Three-Phase Gate Driver
The half-bridge drivers use a bootstrap configuration with a trickle charge pump to support 100% duty cycle
operation. Each half-bridge is configured to drive two N-channel MOSFETs, one for the high-side and one for the
low-side. The half-bridge drivers can be used in combination to drive a 3-phase motor or separately to drive
various other loads.
The internal dead times are adjustable to accommodate a variety of external MOSFETs and applications. The
dead time is adjusted with an external resistor on the DTC pin. Shorting the DTC pin to ground provides the
minimum dead time (50 ns). There is an internal hand shake between the high side and low side MOSFETs
during switching transitions to prevent current shoot-through.
The three-phase gate driver can provide up to 30 mA of average gate driver current. This can support switching
frequencies up to 200 kHz when the MOSFET Qg = 25 nC. The high side gate drive will survive negative output
from the half-bridge up to –10 V for 10 ns. During EN_GATE low and fault conditions the gate driver keeps the
external MOSFETs in high impedance mode.
Each MOSFET gate driver has a V_DS sensing circuit for overcurrent protection. The sense circuit measures the
voltage from the drain to the source of the external MOSFETs while the MOSFET is enabled. This voltage is
compared against the programmed trip point to determine if an overcurrent event has occurred. The trip voltage
is set through the OC_ADJ pin with a voltage usually set with a resistor divider. The high-side sense is between
the PVDD1 and SH_X pins. The low-side sense is between the SH_X and SL_X pins. Ensuring a differential, low
impedance connection to the external MOSFETs for these lines helps provide accurate VDS sensing. The
DRV8302 provides both cycle-by-cycle current limiting and latch overcurrent shutdown of the external MOSFET
through the M_OC pin.
The DRV8302 allows for both 6-PWM and 3-PWM control through the M_PWM pin.
INL_X
0
0
1
1
Table 1. 6-PWM Mode
INH_X
0
1
0
1
GL_X
L
L
H
L
GH_X
L
H
L
L
INL_X
X
X
Table 2. 3-PWM Mode
INH_X
0
1
GL_X
H
L
GH_X
L
H
Table 3. Gate Driver External Components
NAME
R_nOCTW
R_nFAULT
R_DTC
C_GVDD
C_CP
C_DVDD
C_AVDD
C_PVDD1
C_{BST_X}
PIN 1
nOCTW
nFAULT
DTC
GVDD
CP1
DVDD
AVDD
PVDD1
BST_X
PIN 2
V_CC ⁽¹⁾
V_CC ⁽¹⁾
GND (PowerPAD)
GND (PowerPAD)
CP2
AGND
AGND
GND (PowerPAD)
SH_X
RECOMMENDED
≥10 kΩ
≥10 kΩ
0 to 150 kΩ (50 ns to 500 ns)
2.2 µF (20%) ceramic, ≥ 16 V
0.022 µF (20%) ceramic, rated for PVDD1
1 µF (20%) ceramic, ≥ 6.3 V
1 µF (20%) ceramic, ≥ 10 V
≥4.7 µF (20%) ceramic, rated for PVDD1
0.1 µF (20%) ceramic, ≥ 16 V
(1) V_CC is the logic supply to the MCU
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