DRV8302_16 Datasheet, PDF (6/32 Pages) Texas Instruments – Three Phase Gate Driver

DRV8302
SLES267C – AUGUST 2011 – REVISED MARCH 2016
6.3 Recommended Operating Conditions
V_PVDD
I_{DIN_EN}
I_{DIN_DIS}
C_{O_OPA}
R_DTC
I_FAULT
I_OCTW
V_REF
f_gate
T_A
DC supply voltage PVDD1 for normal operation Relative to PGND
DC supply voltage PVDD2 for buck converter
Input current of digital pins when EN_GATE is high
Input current of digital pins when EN_GATE is low
Maximum output capacitance on outputs of shunt amplifier
Dead time control resistor range. Time range is 50 ns (–GND) to 500 ns (150 kΩ) with a
linear approximation.
FAULT pin sink current. Open drain
V = 0.4 V
OCTW pin sink current. Open drain
V = 0.4 V
External voltage reference voltage for current shunt amplifiers
Operating switching frequency of gate driver
Qg(TOT) = 25 nC or total 30-mA gate
drive average current
Ambient temperature
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MIN NOM MAX
8
60
3.5
60
100
1
20
0
150
2
2
2
6
200
–40
125
UNIT
V
V
µA
µA
pF
kΩ
mA
mA
V
kHz
°C
6.4 Thermal Information
THERMAL METRIC⁽¹⁾
DRV8302
DCA (HTSSOP)
UNIT
56 PINS
R_θJA
R_θJC(top)
R_θJB
ψ_JT
ψ_JB
R_θJC(bot)
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
30.3
°C/W
33.5
°C/W
17.5
°C/W
0.9
°C/W
7.2
°C/W
0.9
°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report (SPRA953).
6
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