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THS3215 Datasheet, PDF (40/71 Pages) Texas Instruments – THS3215 650-MHz, Differential to Single-Ended DAC Output Amplifier
THS3215
SBOS780A – MARCH 2016 – REVISED APRIL 2016
www.ti.com
Using the values of RF and RG listed in Table 1, a swept gain output- and input-referred noise estimate is
computed, as shown in Table 2. In this sweep, RS = 0 Ω. The input-referred noise (Eni) in Table 1 is at the
noninverting input of the OPS. To refer the noise to the D2S differential inputs, divide the output noise by two if
there is no interstage loss. Dividing the Eni column by 2 V/V shows that the OPS noise contribution is negligible
when referred to the D2S inputs, where the 6-nV/√Hz differential input noise dominates. Operating with higher
feedback resistors in the OPS quickly increases the output noise due to the inverting input current noise term.
Although increasing RF improves phase margin (for example, when driving a capacitive load), be careful to check
the total output noise using Equation 17.
Table 2. Total Input- and Output-Referred Noise of the OPS Versus Gain
TARGET GAIN
(V/V)
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
BEST RF
(Ω)
324
287
249
205
169
150
158
158
165
169
169
174
174
178
178
178
182
187
BEST RG
(Ω)
634
280
162
102
66.5
49.9
44.2
39.2
36.5
33.2
30.1
28.7
26.7
24.9
23.2
22.1
21
20.5
EO
(nV/√Hz)
7.63
8.07
8.72
9.39
10.42
11.48
13.01
14.21
15.53
17.04
18.42
19.63
20.83
22.51
23.89
29.41
26.54
27.77
Ein
(nV/√Hz)
5.09
4.03
3.47
3.15
2.97
2.89
2.87
2.85
2.84
2.83
2.81
2.81
2.8
2.79
2.79
2.78
2.78
2.78
Operating the OPS as an inverting amplifier is also possible. When driving the OPS directly from the D2S to the
RG resistor, use the values shown in Table 1 for the noninverting mode in order to achieve optimal results. Note
that the RG resistor is the load for the D2S. Operating with the D2S driving an RG < 80 Ω increases the harmonic
distortion of the D2S. In that case, scaling up RF and RG in order to reduce the loading results in better system
performance at the cost of a lower OPS bandwidth. In order to reduce layout parasitics, consider splitting the RG
resistor in two, with the first half close to VO1 and the second half close to VIN– (pin 12). Splitting RG in this
manner places the trace capacitance inside the two resistors, thus keeping both active nodes more stable.
40
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