5962-1123701VXC Datasheet, PDF (2/25 Pages) Texas Instruments – 16-Mb RADIATION-HARDENED SRAM

SMV512K32-SP
SLVSA21H – JUNE 2011 – REVISED JULY 2013
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
Figure 1. SMV512K32 Block Diagram
WZ
E1Z o
• ^{• E2}
o
o
o
•^o
•^o
GZ
•o
o
A7
A8
A9
A10
A11
Memory Array
A12
512 K x 32
A13
A14
A15
A16
DQ(31:0)
•^°
• Read/Write ^°
Circuit
°
°
EDAC
I/O Circuit
Column Decoder
A0 A1 A2 A3 A4 A5 A6 A17 A18
MBE
SCRUBZ
BUSYZ
VDD1 __
VDD1 __
58
A10 __
A9 __
A8 __
A7 __
A6 __
WZ __
A18 __
VSS1 __
A17 __
A5 __
A4 __
A3 __
A2 __
A1 __
A0 __
VSS2 __
VSS2 __ ₇₆
38
__VSS2
__ MSS
__ VDD2
__ MBE
__ BUSYZ
__ SCRUBZ
__ VSS1
__ VDD2
__ E2
__ GZ
__ E1Z
__ A16
__ A15
__ A14
__ A13
__ A12
__ A11
__ VDD1
20 ^{__ VDD1}
Figure 2. SMV512K32 Pin Out
2
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