5962-1123701VXC Datasheet, PDF (18/25 Pages) Texas Instruments – 16-Mb RADIATION-HARDENED SRAM

SMV512K32-SP
SLVSA21H – JUNE 2011 – REVISED JULY 2013
SYMBOL
Table 11. AC Characteristics for EDAC Function ⁽¹⁾
PARAMETER
MIN
MAX
t_BLSL
t_BLBL
t_SLSH
User programmable, BUSYZ low to SCRUBZ low
User programmable, BUSYZ low to BUSYZ low
SCRUBZ low to SCRUBZ high
See Table 10
See Table 9
200
504
t_SHBH
SCRUBZ high to BUSYZ high
50
120
UNIT
ns
ns
ns
ns
t_ETMH
Device enable to MBE high
5.5
ns
t_GHMH
GZ high to MBE high
6.5
ns
t_AVMH
Address valid to MBE high
0.9
ns
t_MHML
MBE high to MBE low
12.8
ns
t_MLEF
MBE low to device disable
0.4
ns
t_MLGL
MBE low to GZ low
1.8
ns
t_MLAX
MBE low to address change
0.1
t_MHQX
MBE high to data change
4.5
t_MHQV
MBE high to data valid
t_EFQZ
Memory enable change to output data tri-state
3.5
t_EFMZ ⁽²⁾
Memory enable change to MBE tri-state
3.5
t_GLMX
GZ-controlled error flag enable time
3.5
t_ETMX
E-controlled error flag enable time
3.5
t_{INIT_E}
E1Z low to BUSYZ low
t_{INIT_MBE}
MBE low to BUSYZ low
t_SLMV
SCRUBZ low to MBE valid
t_E1ZHSH
t_E1ZHBH
t_MHBH
E1Z high to SCRUBZ high
E1Z high to BUSYZ high
MBE high to BUSYZ high
(1) T_C = -55°C to 125°C, V_DD1 = 1.7 V to 1.9 V, V_DD2 = 3 V to 3.6 V (unless otherwise noted).
(2) Parameters ensured by design and/or characterization if not production tested.
ns
ns
8.2
ns
5
ns
5
ns
ns
ns
160
ns
160
ns
146
ns
20
ns
20
ns
20
ns
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FIGURE
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