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| M36W432T Datasheet, PDF (45/57 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product | |||
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M36W432T, M36W432B
Table 30. CFI Query System Interface Information
Offset
Data
Description
VDD Logic Supply Minimum Program/Erase or Write voltage
1Bh
0027h
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
VDD Logic Supply Maximum Program/Erase or Write voltage
1Ch
0036h
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
VPP [Programming] Supply Minimum Program/Erase voltage
1Dh
00B4h
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
VPP [Programming] Supply Maximum Program/Erase voltage
1Eh
00C6h
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
1Fh
0004h Typical timeout per single word program = 2n µs
20h
0004h Typical timeout for Double Word Program = 2n µs
21h
000Ah Typical timeout per individual block erase = 2n ms
22h
0000h Typical timeout for full chip erase = 2n ms
23h
0005h Maximum timeout for word program = 2n times typical
24h
0005h Maximum timeout for Double Word Program = 2n times typical
25h
0003h Maximum timeout per individual block erase = 2n times typical
26h
0000h Maximum timeout for chip erase = 2n times typical
Value
2.7V
3.6V
11.4V
12.6V
16µs
16µs
1s
NA
512µs
512µs
8s
NA
45/57
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