M36W432T Datasheet, PDF (23/57 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

M36W432T, M36W432B
Table 14. DC Characteristics
Symbol
Parameter
Device
Test Condition
Min Typ Max Unit
I_LI Input Leakage Current
Flash &
SRAM
0V ≤ V_IN ≤ V_DDQF
±2
µA
I_LO Output Leakage Current
Flash &
SRAM
0V ≤ V_OUT ≤ V_DDQF,
SRAM Outputs Hi-Z
±10
µA
I_DDS V_DD Standby Current
Flash
SRAM
EF = V_DDQF ± 0.2V
V_DDQF = V_DDF max
E1S = E2S ≥ V_DDS – 0.2V
or E2S ≤ 0.2V
15
50
µA
20
50
µA
I_DDD Supply Current (Reset)
I_DD Supply Current
Flash
SRAM
RPF = V_SSF ± 0.2V
V_IN ≤ V_DDS – 0.2V
or V_IN ≤ 0.2V
I_IO = 0 mA, cycle time = 1µs
V_IN ≤ V_DDS – 0.2V
or V_IN ≤ 0.2V
I_IO = 0 mA, min cycle time
15
50
µA
1
2
mA
7
12
mA
I_DDR Supply Current (Read)
Flash EF = VIL, GF = VIH, f = 5 MHz
10
20
mA
I_DDW Supply Current (Program)
Flash
Program in progress
10
20
mA
I_DDE Supply Current (Erase)
Flash
Erase in progress
5
20
mA
I_DDES
Supply Current
(Erase Suspend)
Flash Erase Suspend in progress
50
µA
I_DDWS
Supply Current
(Program Suspend)
Flash Program Suspend in progress
50
µA
I_PPS
Program Current
(Standby)
Flash
V_PPF ≤ V_DDQF
V_PPF > V_DDF
0.2
5
µA
100
400
µA
I_PPR
Program Current
(Read)
Flash
V_PPF ≤ V_DDQF
V_PPF = V_DDF
0.2
5
µA
100
400
µA
I_PPW
Program Current
(Program)
Flash
V_PPF = 12V ± 0.6V
Program in progress
5
10
mA
I_PPE
Program Current
(Erase)
Flash
V_PPF = 12V ± 0.6V
Program in progress
5
10
mA
V_IL Input Low Voltage
Flash &
SRAM
V_DDQF = V_DDS ≥ 2.7V
– 0.3
0.8
V
V_IH Input High Voltage
Flash &
SRAM
V_DDQF = V_DDS ≥ 2.7V
2.2
V_DDQF
+0.3
V
V_OL Output Low Voltage
V_OH Output High Voltage
Flash &
SRAM
Flash &
SRAM
V_DDQF = V_DDS = V_DD min
I_OL = 100µA
V_DDQF = V_DDS = V_DD min
I_OH = –100µA
V_DDQ
–0.1
0.1
V
V
V_PPL
Program Voltage (Program or
Erase operations)
Flash
2.7
3.3
V
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