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M36W432T Datasheet, PDF (35/57 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product | |||
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M36W432T, M36W432B
Table 20. SRAM Write AC Characteristics
Symbol
Alt
Parameter
SRAM
Min
Max
Unit
tAVAV
tWC Write Cycle Time
70
ns
tAVE1L
tAS (1) Address Valid to Chip Enable 1 Low
0
ns
tAVE2H
tAS (1) Address Valid to Chip Enable 2 High
0
ns
tAVWH
tAW Address Valid to Write Enable High
60
ns
tAVWL
tAS (1) Address Valid to Write Enable Low
0
ns
tBLWH
tBW UBS, LBS Valid to End of Write
60
ns
tDVE1H
tDW Input Valid to Chip Enable 1 High
30
ns
tDVE2L
tDW Input Valid to Chip Enable 2 Low
30
ns
tDVWH
tDW Input Valid to Write Enable High
30
ns
tE1HAX
tWR (2) Chip Enable 1 High to Address Transition
0
ns
tE1LWH,
tE2HWH
tCW (3) Chip Select to End of Write
60
ns
tE2LAX
tWR (2) Chip Enable 2 Low to Address Transition
0
ns
tGHQZ
tGHZ Output Enable High to Output Hi-Z
25
ns
tWHAX
tWR (2) Write Enable High to Address Transition
0
ns
tWHDX
tDH Write Enable High to Input Transition
0
ns
tWHQX
tOW Write Enable High to Output Transition
10
ns
tWLQZ
tWHZ Write Enable Low to Output Hi-Z
25
ns
tWLWH
tWP (4) Write Enable Pulse Width
50
ns
Note: 1. tAS is measured from the address valid to the beginning of write.
2. tWR is measured from the end or write to the address change. tWR applied in case a write ends as E1S or WS going high.
3. tCW is measured from E1S going low end of write.
4. A Write occurs during the overlap (tWP) of low E1S and low WS. A write begins when E1S goes low and WS goes low with asserting
UBS or LBS for single byte operation or simultaneously asserting UBS and LBS for double byte operation. A write ends at the ear-
liest transition when E1S goes high and WS goes high. The tWP is measured from the beginning of write to the end of write.
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