M36W432T Datasheet, PDF (36/57 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

M36W432T, M36W432B
Figure 20. SRAM Low V_DDS Data Retention AC Waveforms, E1S Controlled
VDDS
2.8 V
1.5 V
E1S
VSSS
tCDR
DATA RETENTION MODE
tR
VDR ≥ 1.5V
E1S ≥ VDDS – 0.2V
AI05218
Figure 21. SRAM Low V_DDS Data Retention AC Waveforms, E2S Controlled
VDDS
2.8 V
E2S
1.5 V
0.4 V
VSSS
DATA RETENTION MODE
tCDR _{VDR ≥ 1.5V}
tR
E2S ≤ 0.2V
AI05219
Table 21. SRAM Low V_DDS Data Retention Characteristic
Symbol
Parameter
Test Condition
I_DDDR Supply Current (Data Retention)
V_DDS = 3.3V, E1S ≥ V_DDS – 0.2V,
E2S ≥ V_DDS – 0.2V or E2S ≤ 0.2V
V_DR Supply Voltage (Data Retention)
E1S ≥ V_DDS – 0.2V, E2S ≤ 0.2V
t_CDR Chip Disable to Power Down
E1S ≥ V_DDS – 0.2V, E2S ≤ 0.2V
t_R
Operation Recovery Time
Note: 1. All other Inputs VIH ≤ VDD –0.2V or VIL ≤ 0.2V.
2. Sampled only. Not 100% tested.
Min
Max Unit
15
µA
1.5
3.3
V
0
ns
t_RC
ns
36/57