C8051T630 Datasheet, PDF (29/221 Pages) Silicon Laboratories – Mixed-Signal Byte-Programmable EPROM MCU

C8051T630/1/2/3/4/5
Table 5.10. Temperature Sensor Electrical Characteristics
V_DD = 3.0 V, –40 to +85 °C unless otherwise specified.
Parameter
Conditions
Linearity
Slope
Slope Error*
Offset
Temp = 0 °C
Offset Error*
Temp = 0 °C
Note: Represents one standard deviation from the mean.
Min Typ Max Units
—
±0.5
—
°C
—
3.49
— mV/°C
—
±40
— µV/°C
—
930
—
mV
—
±12
—
mV
Table 5.11. Voltage Reference Electrical Characteristics
V_DD = 3.0 V; –40 to +85 °C unless otherwise specified.
Parameter
Conditions
Min Typ Max Units
On-Chip Reference (REFBE = 1)
Output Voltage
1.2 V Setting, 25 °C ambient
2.4 V Setting 25 °C ambient
1.195 1.2 1.205 V
2.3 2.35 2.4
V
VREF Short-Circuit Current
— 4.5
6
mA
VREF Temperature 
Coefficient
— ±15 — ppm/°C
Load Regulation
Load = 0 to 200 µA to GND, 1.2 V setting — 3.7 — µV/µA
Load = 0 to 200 µA to GND, 2.4 V setting — 5.0 — µV/µA
VREF Turn-On Time 
(1.2 V setting)
4.7 µF tantalum, 0.1 µF ceramic bypass — 1.2 —
ms
0.1 µF ceramic bypass
— 25 —
µs
VREF Turn-On Time 
(2.4 V setting)
4.7 µF tantalum, 0.1 µF ceramic bypass — 4.3 —
ms
0.1 µF ceramic bypass
— 90 —
µs
Power Supply Rejection 1.2 V setting
— 120 — µV/V
2.4 V setting
— 360 — µV/V
External Reference (REFBE = 0)
Input Voltage Range
Input Current
0
— V_DD
V
Sample Rate = 500 ksps; VREF = 2.5 V — 12 —
µA
Power Specifications
Reference Bias Generator REFBE = 1, 2.4 V setting
— 75 100
µA
Rev. 1.0
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