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C8051T630 Datasheet, PDF (26/221 Pages) Silicon Laboratories – Mixed-Signal Byte-Programmable EPROM MCU
C8051T630/1/2/3/4/5
Table 5.4. Reset Electrical Characteristics
–40 to +85 °C unless otherwise specified.
Parameter
Conditions
Min
Typ
RST Output Low Voltage
RST Input High Voltage
RST Input Low Voltage
IOL = 8.5 mA, 
VDD = 1.8 V to 3.6 V
—
—
0.75 x VDD —
—
—
RST Input Pullup Current
RST = 0.0 V
—
25
VDD POR Ramp Time
VDD Monitor Threshold (VRST)
Missing Clock Detector 
Timeout
Time from last system clock
rising edge to reset initiation
—
—
1.7
1.75
500
625
Reset Time Delay
Delay between release of any
—
—
reset source and code 
execution at location 0x0000
Minimum RST Low Time to
Generate a System Reset
15
—
VDD Monitor Turn-on Time
VDD Monitor Supply Current
VDD = VRST - 0.1 V
—
50
—
20
Max Units
0.6
V
—
V
0.6
VDD
50
µA
1
ms
1.8
V
750
µs
60
µs
—
µs
—
µs
30
µA
Table 5.5. Internal Voltage Regulator Electrical Characteristics
–40 to +85 °C unless otherwise specified.
Parameter
Input Voltage Range
Bias Current
Conditions
Normal Mode
Min Typ
1.8
—
—
30
Max Units
3.6
V
50
µA
Table 5.6. EPROM Electrical Characteristics
Parameter
EPROM Size
EPROM Size
Conditions
C8051T630/1
C8051T632/3
Min
Typ
81921
—
4096
—
EPROM Size
C8051T634/5
2048
—
Write Cycle Time (per Byte)
Programming Voltage2 (VPP)
Date Code 0935 and later
Date Code prior to 0935
105
155
5.75
6.0
6.25 6.375
Notes:
1. 512 bytes at location 0x1E00 to 0x1FFF are not available for program storage.
2. Refer to device errata for details.
Max
—
—
—
205
6.25
6.5
Units
bytes
bytes
bytes
µs
V
V
26
Rev. 1.0