C8051T630 Datasheet, PDF (23/221 Pages) Silicon Laboratories – Mixed-Signal Byte-Programmable EPROM MCU

C8051T630/1/2/3/4/5
5. Electrical Characteristics
5.1. Absolute Maximum Specifications
Table 5.1. Absolute Maximum Ratings
Parameter
Conditions
Min Typ Max Units
Ambient temperature under bias
–55
—
125
°C
Storage Temperature
Voltage on RST or any Port I/O Pin V_DD > 2.2 V
(except V_PP during programming) with _{VDD < 2.2 V}
respect to GND
Voltage on V_PP with respect to GND VDD > 2.4 V
during a programming operation
Duration of High-voltage on V_PP pin
(cumulative)
V_PP > (V_DD + 3.6 V)
Voltage on V_DD with respect to GND Regulator in Normal Mode
Regulator in Bypass Mode
Maximum Total current through V_DD
and GND
Maximum output current sunk by RST
or any Port pin
–65
–0.3
–0.3
–0.3
—
–0.3
–0.3
—
—
—
150
°C
—
5.8
V
— V_DD + 3.6 V
—
7.0
V
—
10
s
—
4.2
V
—
1.98
V
—
500
mA
—
100
mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the devices at those or any other conditions above
those indicated in the operation listings of this specification is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
Rev. 1.0
23