SI4464 Datasheet, PDF (13/56 Pages) Silicon Laboratories – HIGH-PERFORMANCE

Si4464/63/61/60
Table 7. Absolute Maximum Ratings
Parameter
Value
Unit
V_DD to GND
–0.3, +3.6
V
Instantaneous V_RF-peak to GND on TX Output Pin
–0.3, +8.0
V
Sustained V_RF-peak to GND on TX Output Pin
–0.3, +6.5
V
Voltage on Digital Control Inputs
Voltage on Analog Inputs
RX Input Power
–0.3, V_DD + 0.3
–0.3, V_DD + 0.3
+10
V
V
dBm
Operating Ambient Temperature Range T_A
–40 to +85
C
Thermal Impedance _JA
30
C/W
Junction Temperature T_J
+125
C
Storage Temperature Range T_STG
–55 to +125
C
Note: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device at or beyond these ratings in the operational sections of
the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability. Power Amplifier may be damaged if switched on without proper load or termination connected. TX
matching network design will influence TX V_RF-peak on TX output pin. Caution: ESD sensitive device.
Rev 1.2
13