SI4464 Datasheet, PDF (12/56 Pages) Silicon Laboratories – HIGH-PERFORMANCE

Si4464/63/61/60
Table 6. Digital IO Specifications (GPIO_x, SCLK, SDO, SDI, nSEL, nIRQ, SDN)¹
Parameter
Rise Time^2,3
Fall Time^3,4
Symbol
T_RISE
T_FALL
Test Condition
0.1 x V_DD to 0.9 x V_DD,
C_L = 10 pF,
DRV<1:0> = HH
0.9 x V_DD to 0.1 x V_DD,
C_L = 10 pF,
DRV<1:0> = HH
Min
Typ Max
Unit
—
2.3
—
ns
—
2
—
ns
Input Capacitance
C_IN
Logic High Level Input Voltage
V_IH
Logic Low Level Input Voltage
V_IL
Input Current
I_IN
Input Current If Pullup is Activated I_INP
Drive Strength for Output Low
Level
I_OmaxLL
I_OmaxLH
I_OmaxHL
I_OmaxHH
Drive Strength for Output High
Level
I_OmaxLL
I_OmaxLH
I_OmaxHL
I_OmaxHH
Drive Strength for Output High
Level for GPIO0
I_OmaxLL
I_OmaxLH
I_OmaxHL
I_OmaxHH
Logic High Level Output Voltage
V_OH
Logic Low Level Output Voltage
V_OL
0<V_IN< V_DD
V_IL = 0 V
DRV[1:0] = LL³
DRV[1:0] = LH³
DRV[1:0] = HL³
DRV[1:0] = HH³
DRV[1:0] = LL³
DRV[1:0] = LH³
DRV[1:0] = HL³
DRV[1:0] = HH³
DRV[1:0] = LL³
DRV[1:0] = LH³
DRV[1:0] = HL³
DRV[1:0] = HH³
DRV[1:0] = HL
DRV[1:0] = HL
—
2
—
pF
V_DD x 0.7 —
—
V
—
— V_DD x 0.3 V
–10
—
10
µA
1
—
10
µA
—
6.66
—
mA
—
5.03
—
mA
—
3.16
—
mA
—
1.13
—
mA
—
5.75
—
mA
—
4.37
—
mA
—
2.73
—
mA
—
0.96
—
mA
—
2.53
—
mA
—
2.21
—
mA
—
1.7
—
mA
—
0.80
—
mA
V_DD x 0.8 —
—
V
—
— V_DD x 0.2 V
Notes:
1. All specifications guaranteed by qualification. Qualification test conditions are listed in the "Qualification Test
Conditions" section in "1.1. Definition of Test Conditions" on page 14.
2. 8 ns is typical for GPIO0 rise time.
3. Assuming VDD = 3.3 V, drive strength is specified at Voh (min) = 2.64 V and Vol(max) = 0.66 V at room temperature.
4. 2.4 ns is typical for GPIO0 fall time.
12
Rev 1.2