HYB39S64400 Datasheet, PDF (46/53 Pages) Siemens Semiconductor Group – 64 MBit Synchronous DRAM

19.1 Random Row Write (Interleaving Banks) with Precharge
Burst Length = 8, CAS Latency = 2
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 _T11 T12 _{T13 T14 T15 T16 T17 T18 T19 T20 T21 T22}
CLK
t_CK2
CKE ^High
CS
RAS
CAS
WE
BS
AP
RAx
RBx
RAy
Addr
DQM
RAx
CAyX
t_RCD
RBx
CBx
t_WR
RAy
t_RP
CAy
t_WR
Hi-Z
DQ
DAx0 DAx1 DAx2 DAx3 DAx4 DAx5 DAx6 DAx7 DBx0 DBx1 DBx2 DBx3 DBx4 DBx5 DBx6 DBx7 DAy0 DAy1 DAy2 DAy3 DAy4
Activate
Command
Bank A
Write
Command
Bank A
Activate
Command
Bank B
Write
Command
Bank B
Precharge
Command
Bank A
Activate
Command
Bank A
Write
Command
Bank A
Precharge
Command
Bank B