HYB39S64400 Datasheet, PDF (24/53 Pages) Siemens Semiconductor Group – 64 MBit Synchronous DRAM

4 2. Minimum Read to Write Interval
HYB39S64400/800/160AT(L)
64MBit Synchronous DRAM
(Burst Length = 4, CAS latency = 2)
T0
T1
T2
T3
T4
T5
T6
CLK
DQM
COMMAND ^NOP
NOP
t_DQZ
BANK A
ACTIVATE
NOP
t_DQW
1 Clk Interval
READ A
WRITE A
NOP
T7
NOP
T8
NOP
CAS latency = 2
t_CK2, DQ’s
Must be Hi-Z before
the Write Command
DIN A0
DIN A1
DIN A2
DIN A3
: “H” or “L”
4. 3. Non-Minimum Read to Write Interval
(Burst Length = 4, CAS latency = 2, 3
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
DQM
COMMAND ^NOP
CAS latency = 2
t_CK2, DQ’s
READ A
NOP
t_DQZ
NOP
READ A
t_DQW
NOP
WRITE B
DOUT A0
Must be Hi-Z before
the Write Command
DOUT A1
DIN B0
NOP
DIN B1
NOP
DIN B2
CAS latency = 3
t_CK3, DQ’s
DOUT A0
DIN B0
DIN B1
DIN B2
: “H” or “L”
Semiconductor Group
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