HYB39S64400 Datasheet, PDF (42/53 Pages) Siemens Semiconductor Group – 64 MBit Synchronous DRAM

17.1 Random Column Write (Page within same Bank)
Burst Length = 4, CAS Latency = 2
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 _T11 T12 _{T13 T14 T15 T16 T17 T18 T19 T20 T21 T22}
CLK
t_CK2
CKE
CS
RAS
CAS
WE
BS
AP
RBz
RABwz
Addr
RBz
CBz
CBx
CBy
RABwz
CABxz
DQM
DQ ^Hi-Z
DBw0 DBw1 DBw2 DBw3 DBx0 DBx1 DBy0 DBy1 DBy2 DBy3
DBz0 DBz1 DBz2 DBz3
Activate
Command
Bank B
Write
Command
Bank B
Write
Command
Bank B
Write
Command
Bank B
Precharge
Command
Bank B
Activate
Command
Bank B
Write
Command
Bank B