HYB39S64400 Datasheet, PDF (15/53 Pages) Siemens Semiconductor Group – 64 MBit Synchronous DRAM

HYB39S64400/800/160AT(L)
64MBit Synchronous DRAM
Operating Currents (T_A = 0 to 70^oC, Vdd = 3.3V ± 0.3V
(Recommended Operating Conditions unless otherwise noted)
Parameter & Test Condition
OPERATING CURRENT
Symb.
ICC1
-8/-8B -10
max.
trc=trcmin., tck=tckmin.
Ouputs open, Burst Length = 4, CL=3
All banks operated in random access,
all banks operated in ping-pong manner
to maximize gapless data access
PRECHARGE STANDBY CURRENT in tck = min.
Power Down Mode
CS =VIH (min.), CKE<=Vil(max)
tck = Infinity
PRECHARGE STANDBY CURRENT in tck = min.
Non-Power Down Mode
CS = VIH (min.), CKE>=Vih(min)
tck = Infinity
x4 100
70
x8 110
75
x16 130
90
ICC2P
2
2
ICC2PS
1
1
ICC2N
35
30
ICC2NS
5
5
NO OPERATING CURRENT
tck = min., CS = VIH(min),
active state ( max. 4 banks)
CKE>=VIH(min.) ICC3N
45
40
CKE<=VIL(max.) ICC3P
8
8
BURST OPERATING CURRENT
tck = min.,
Read command cycling
AUTO REFRESH CURRENT
tck = min.,
Auto Refresh command cycling
SELF REFRESH CURRENT
Self Refresh Mode, CKE=0.2V
ICC4
x4 60
40
x8 70
50
x16 100
70
ICC5
130
90
standard version
1
1
L-version
ICC6
500
500
Note
mA 3
mA
mA
mA 3
mA 3
mA 3
mA 3
mA 3
mA 3
mA 3,4
mA
mA
mA 3
mA 3
µA 3
Notes:
3. These parameters depend on the cycle rate. These values are measured at 100 MHz for -8
and at 66 MHz for -10 parts. Input signals are changed once during tck, excepts for ICC6 and for standby
currents when tck=infinity.
4. These parameters are measured with continuous data stream during read access and all DQ toggling. CL=3
and BL=4 is assumed and the VDDQ current is excluded.
Semiconductor Group
15