HYB39S164400 Datasheet, PDF (27/64 Pages) Siemens Semiconductor Group – 16 MBit Synchronous DRAM

HYB39S16400/800/160BT-8/-10
16MBit Synchronous DRAM
8.2 Termination of a Burst Write Operation
(CAS Laency = 1, 2, 3, Burst Length = 8)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
COMMAND ^NOP
CAS latency = 1,2,3
DQs’
WRITE A
DIN A0
NOP
NOP
Burst
Stop
NOP
DIN A1
DIN A2
dont’ care
Input data for the Write is masked.
NOP
NOP
NOP
Semiconductor Group
27