HYB39S164400 Datasheet, PDF (24/64 Pages) Siemens Semiconductor Group – 16 MBit Synchronous DRAM

HYB39S16400/800/160BT-8/-10
16MBit Synchronous DRAM
5. Burst Write Operation
(Burst Length = 4, CAS latency = 1, 2, or 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
COMMAND ^NOP
WRITE A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DQs’
DIN A0
DIN A1
DIN A2
DIN A3
dont’ care
The first data element and the Write
are registered on the same clock edge.
Extra data is ignored after
termination of a Burst.
6.1 Write Interrupted by a Write
(Burst Length = 4, CAS latency = 1, 2, or 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
COMMAND ^NOP
DQs’
WRITE A
WRITE B
1 Clk Interval
DIN A0
DIN B0
NOP
DIN B1
NOP
DIN B2
NOP
DIN B3
NOP
NOP
NOP
Semiconductor Group
24