HYB39S164400 Datasheet, PDF (23/64 Pages) Siemens Semiconductor Group – 16 MBit Synchronous DRAM

4 2. Minimum Read to Write Interval
HYB39S16400/800/160BT-8/-10
16MBit Synchronous DRAM
(Burst Length = 4, CAS latency = 1, 2)
T0
T1
T2
T3
T4
T5
T6
CLK
DQM
COMMAND ^NOP
NOP
t_DQZ
BANK A
ACTIVATE
NOP
t_DQW
1 Clk Interval
READ A
WRITE A
NOP
T7
NOP
T8
NOP
CAS latency = 1
t_CK1, DQs’
CAS latency = 2
t_CK2, DQs’
: “H”or “L”
DIN A0
Must be Hi-Z before
the Write Command
DIN A0
DIN A1
DIN A1
DIN A2
DIN A2
DIN A3
DIN A3
4. 3. Non-Minimum Read to Write Interval
(Burst Length = 4, CAS latency = 3
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
DQM
COMMAND ^NOP
READ A
NOP
t_DQZ
NOP
READ A
t_DQW
NOP
WRITE B
NOP
NOP
CAS latency = 1
t_CK1, DQs’
CAS latency = 2
t_CK2, DQs’
CAS latency = 3
t_CK3, DQs’
: “H”or “L”
DOUT A0
DOUT A1
DOUT A0
DOUT A2
DIN B0
Must be Hi-Z before
the Write Command
DOUT A1
DIN B0
DIN B1
DIN B1
DIN B2
DIN B2
DOUT A0
DIN B0
DIN B1
DIN B2
Semiconductor Group
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