HYB39S164400 Datasheet, PDF (22/64 Pages) Siemens Semiconductor Group – 16 MBit Synchronous DRAM

HYB39S16400/800/160BT-8/-10
16MBit Synchronous DRAM
3. Read Interrupted by a Read
(Burst Length = 4, CAS latency = 1, 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
COMMAND ^{READ A}
READ B
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CAS latency = 1
t_CK1, DQs’
CAS latency = 2
t_CK2, DQs’
CAS latency = 3
t_CK3, DQs’
DOUT A0
DOUT B0
DOUT B1
DOUT B2
DOUT B3
DOUT A0
DOUT B0
DOUT B1
DOUT B2
DOUT B3
DOUT A0
DOUT B0
DOUT B1
DOUT B2
DOUT B3
4.1 Read to Write Interval
(Burst Length = 4, CAS latency = 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
DQM
COMMAND ^NOP
Minimum delay between the Read and Write Commands = 4+1 = 5 cycles
t_DQZ
t_DQW
READ A
NOP
NOP
NOP
NOP
WRITE B
NOP
NOP
DQs’
: “H”or “L”
DOUT A0
DIN B0
Must be Hi-Z before
the Write Command
DIN B1
DIN B2
Semiconductor Group
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