HYB39S164400 Datasheet, PDF (2/64 Pages) Siemens Semiconductor Group – 16 MBit Synchronous DRAM

HYB39S16400/800/160BT-8/-10
16MBit Synchronous DRAM
Ordering Information
Type
Ordering Code
LVTTL-version:
HYB 39S16400BT-8
HYB 39S16400BT-10
HYB 39S16800BT-8
HYB 39S16800BT-10
HYB 39S16160BT-8
HYB 39S16160BT-10
Package
P-TSOPII-44 (400mil)
P-TSOPII-44-(400mil)
P-TSOPII-44-(400mil)
P-TSOPII-44 (400mil)
P-TSOPII-50 (400mil)
P-TSOPII-50-(400mil)
Description
125MHz 2B x 2M x 4 SDRAM
100MHz 2B x 2M x 4 SDRAM
125MHz 2B x 1M x 8 SDRAM
100MHz 2B x 1M x 8 SDRAM
125MHz 2B x 512k x 16 SDRAM
100MHz 2B x 512k x 16 SDRAM
Pin Description and Pinouts:
CLK
CKE
CS
RAS
CAS
WE
A0-A10
A11 (BS)
Clock Input
Clock Enable
Chip Select
Row Address Strobe
Column Address Strobe
Write Enable
Address Inputs
Bank Select
DQ
DQM, LDQM, UDQM
Vdd
Vss
Vddq
Vssq
NC
Data Input /Output
Data Mask
Power (+3.3V)
Ground
Power for DQs’ (+ 3.3V)
Ground for DQs’
not connected
Semiconductor Group
2