HYB39S164400 Datasheet, PDF (26/64 Pages) Siemens Semiconductor Group – 16 MBit Synchronous DRAM

HYB39S16400/800/160BT-8/-10
16MBit Synchronous DRAM
7.2 Burst Read with Auto-Precharge
(Burst Length = 4, CAS latency = 1, 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
COMMAND ^{READ A}
with AP
CAS latency = 1
t_CK1, DQs’
CAS latency = 2
t_CK2, DQs’
CAS latency = 3
t_CK3, DQs’
NOP
NOP
* ^tRP
DOUT A0
DOUT A1
*
t_RP
DOUT A0
*
NOP
DOUT A2
DOUT A1
t_RP
DOUT A0
NOP
DOUT A3
DOUT A2
DOUT A1
NOP
DOUT A3
DOUT A2
NOP
DOUT A3
NOP
NOP
* ^{Begin Autoprecharge}
Bank can be reactivated after trp
8.1 Termination of a Burst Read Operation
(CAS latency = 1, 2, 3 / Burst Length = 8)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
COMMAND ^{READ A}
NOP
NOP
NOP
Burst
Stop
NOP
NOP
NOP
NOP
CAS latency = 1
t_CK1, DQs’
CAS latency = 2
t_CK2, DQs’
CAS latency = 3
t_CK3, DQs’
DOUT A0
DOUT A1
DOUT A2
DOUT A3
The burst ends after a delay equal to theCAS latency.
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DOUT A0 DOUT A1 DOUT A2 DOUT A3
Semiconductor Group
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