K4B2G1646C-HCF8000 Datasheet, PDF (40/64 Pages) Samsung semiconductor – 2Gb C-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant)

K4B2G1646C
datasheet
[ Table 46 ] DDR3-1600 Speed Bins
Speed
CL-nRCD-nRP
Parameter
Internal read command to first data
ACT to internal read or write delay time
PRE command period
ACT to ACT or REF command period
ACT to PRE command period
CL = 5
CL = 6
CL = 7
CL = 8
CL = 9
CL = 10
CL = 11
Supported CL Settings
Supported CWL Settings
CWL = 5
CWL = 6,7,8
CWL = 5
CWL = 6
CWL = 7, 8
CWL = 5
CWL = 6
CWL = 7
CWL = 8
CWL = 5
CWL = 6
CWL = 7
CWL = 8
CWL = 5,6
CWL = 7
CWL = 8
CWL = 5,6
CWL = 7
CWL = 8
CWL = 5,6,7
CWL = 8
Symbol
tAA
tRCD
tRP
tRC
tRAS
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
DDR3-1600
11-11-11
min
13.75
(13.125)¹⁰
13.75
(13.125)¹⁰
13.75
(13.125)¹⁰
48.75
(48.125)¹⁰
35
max
20
-
-
-
9*tREFI
3.0
3.3
2.5
1.875
1.875
1.5
1.5
1.25
Reserved
3.3
Reserved
Reserved
Reserved
<2.5
Reserved
Reserved
Reserved
<2.5
Reserved
Reserved
Reserved
<1.875
Reserved
Reserved
<1.875
Reserved
Reserved
<1.5
5,6,7,8,9,10,11
5,6,7,8
Rev. 1.11
DDR3 SDRAM
Units
NOTE
ns
ns
ns
ns
ns
ns
1,2,3,4,7,11,
12
ns
4
ns
1,2,3,7
ns
1,2,3,4,7
ns
4
ns
4
ns
1,2,3,4,7
ns
1,2,3,4,7
ns
4
ns
4
ns
1,2,3,7
ns
1,2,3,4,7
ns
1,2,3,4
ns
4
ns
1,2,3,4,7
ns
1,2,3,4
ns
4
ns
1,2,3,7
ns
1,2,3,4
ns
4
ns
1,2,3,10
nCK
nCK
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