M16C6C Datasheet, PDF (53/94 Pages) Renesas Technology Corp – RENESAS MCU

M16C/6C Group
5. Electrical Characteristics
Table 5.11 Flash Memory (Data Flash) Electrical Characteristics
Symbol
-
-
-
-
-
-
-
t_PS
-
Parameter
Program/erase cycles ^{(2, 4, 5)}
Two words program time
Lock bit program time
Block erase time
Program, erase voltage
Conditions
V_CC1 = 3.3 V, T_opr = 25°C
V_CC1 = 3.3 V, T_opr = 25°C
V_CC1 = 3.3 V, T_opr = 25°C
V_CC1 = 3.3 V, T_opr = 25°C
Min.
10,000 ⁽³⁾
2.7
Read voltage
2.7
Program, erase temperature
0
Flash Memory Circuit Stabilization Wait Time
Data hold time ⁽⁷⁾
Ambient temperature = 55 °C
Standard
Typ.
Max.
300
4000
140
3000
0.2
3.0
5.5
5.5
60
50
20
Unit
times
μs
μs
s
V
V
°C
μs
year
Notes:
1. V_CC1 = 2.7 to 5.5 V at T_opr = 0 to 60°C unless otherwise specified.
2. Definition of program and erase cycles
The program and erase cycles refer to the number of per-block erasures.
If the program and erase cycles are n (n=10,000), each block can be erased n times.
For example, if a 4 Kbyte block is erased after writing two word data 1,024 times, each to a different address, this
counts as one program and erase cycles. Data cannot be written to the same address more than once without
erasing the block (rewrite prohibited).
3. Cycles to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing
to sequential addresses in turn so that as much of the block as possible is used up before performing an erase
operation. For example, when programming groups of 16 bytes, the effective number of rewrites can be
minimized by programming up to 128 groups before erasing them all in one operation. In addition, averaging the
erasure cycles between blocks A and B can further reduce the actual erasure cycles. It is also advisable to retain
data on the erasure cycles of each block and limit the number of erase operations to a certain number.
5. If an error occurs during block erase, attempt to execute the clear status register command, then execute the
block erase command at least three times until the erase error does not occur.
6. Customers desiring program/erase failure rate information should contact their Renesas technical support
representative.
7. The data hold time includes time that the power supply is off or the clock is not supplied.
REJ03B0277-0100 Rev.1.00 Jul.15, 2009
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